Infineon FF1000R17IE4D_B2 IGBT 모듈 IGBT 1700V 1000A

Technology: Si

Unit Weight: 1.2 kg

REACH - SVHC: Details

Configuration: Dual

Pd - Power Dissipation: 6.25 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 1.39 kA