Infineon FF1200R12IE5PBPSA1 IGBT 실리콘 모듈 1200 V, 1200 A 듀얼 IGBT 모듈

Technology: Si

Unit Weight: 825 g

Configuration: Dual

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 1.2 kA