Infineon FF1400R17IP4 IGBT 모듈 IGBT 모듈 1400A 1700V

Technology: Si

Unit Weight: 1.2 kg

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 9.55 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 1.4 kA