Infineon FF2400R12IP7BPSA1 IGBT 모듈 1200 V, 2400 A 듀얼 IGBT 모듈

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 12.7 V

Continuous Collector Current at 25 C: 2.4 kA