Infineon FF300R12MS4 IGBT 실리콘 모듈 N-CH 1.2KV 370A

Width: 62 mm

Height: 17 mm

Length: 152 mm

Technology: Si

Unit Weight: 345 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.95 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 370 A