Infineon FF450R45T3E4B5BPSA1 IGBT 모듈 4500 V, 450 A 듀얼 IGBT 모듈

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.5 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 2.35 V

Continuous Collector Current at 25 C: 450 A