Infineon FF650R17IE4 IGBT 실리콘 모듈 N-CH 1.7KV 930A

Width: 89 mm

Height: 38 mm

Length: 172 mm

Technology: Si

Unit Weight: 849 g

REACH - SVHC: Details

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 4.15 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 930 A