Infineon FF6MR12W2M1HPB11BPSA1 하프 브리지 CoolSiC MOSFET 하프 브리지 모듈 1200 V

Fall Time: 30 ns

Rise Time: 18.7 ns

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 5.65 V

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 20.4 ns

Typical Turn-Off Delay Time: 62.6 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.63 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.55 V