Infineon FF900R12IE4V IGBT 실리콘 모듈 1200 V, 900 A 듀얼 IGBT 모듈

Technology: Si

Unit Weight: 1.191 kg

Configuration: Dual

Pd - Power Dissipation: 5.1 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 900 A