Infineon FP10R12W1T7PBPSA1 IGBT 실리콘 모듈 EASY STANDARD

Technology: Si

Configuration: PIM

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.82 V

Continuous Collector Current at 25 C: 10 A