Infineon FP35R12KT4BPSA1 IGBT 실리콘 모듈 1200 V, 35 A PIM 3상 입력 정류기 IGBT 모듈

Technology: Si

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 210 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 35 A