Infineon FP50R07N2E4BPSA1 IGBT 실리콘 모듈 650 V, 50 A PIM 3상 입력 정류기 IGBT 모듈

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 70 A