Infineon FS45MR12W1M1PB11BPSA1 트랜지스터 실리콘 카바이드 MOSFET 어레이 모듈 헥사 N-CH 1200V AG-Easy1BM 트레이

Channel Type: Hex N Channel

Power Dissipation: 20

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 25

Mosfet Module Configuration: SixPack

Drain Source On State Resistance: 45

Gate Source Threshold Voltage Max: 5.55