Infineon FS75R12KE3B9BPSA1 IGBT 실리콘 모듈 1200 V, 75 A 식스팩 IGBT 모듈

Technology: Si

Configuration: 6-Pack

Pd - Power Dissipation: 355 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 105 A