Infineon FZ1200R17HP4_B2 IGBT 모듈 IGBT 1700V 1200A

Technology: Si

Unit Weight: 800 g

REACH - SVHC: Details

Configuration: Single

Pd - Power Dissipation: 7.8 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 1.2 kA