Infineon FZ1400R33HE4BPSA1 IGBT 실리콘 모듈 IHV IHM T

Technology: Si

Configuration: Single

Pd - Power Dissipation: 2.9 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 3.3 kV

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 1.4 kA