Infineon FZ2400R33HE4BPSA1 IGBT 실리콘 모듈 3300 V, 2400 A 단일 스위치 IGBT 모듈

Technology: Si

Configuration: Single

Pd - Power Dissipation: 5.4 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 3.3 kV

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 2.4 kA