Infineon FZ3600R17HE4 IGBT 모듈 IGBT 1700V 3600A

Technology: Si

Configuration: Single

Pd - Power Dissipation: 20 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 3.6 kA