Infineon GS-065-030-2-L-TR GaN FETs 650V, 30A, GaN E-모드, 8x8 PDFN, 하단 냉각

Technology: GaN-on-Si

Mounting Style: SMD/SMT

Transistor Type: E-Mode

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Maximum Operating Frequency: > 1 MHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 30 A

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V