Infineon IFS150B12N3E4P_B11 IGBT 실리콘 모듈 1200V, 150 A, 식스팩 IGBT 모듈

Technology: Si

Unit Weight: 422.455 g

Configuration: 6-Pack

Pd - Power Dissipation: 750 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 220 A