Infineon IGT65R045D2ATMA1 CoolGaN 트랜지스터 CoolGaN 트랜지스터 650 V G5

Fall Time: 13 ns

Rise Time: 9 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 131 W

Vgs - Gate-Source Voltage: - 10 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 54 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V