Infineon IKD08N65ET6ARMA1 IGBT 트랜지스터 가전제품 14

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 27.5 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 16 A