Infineon IKP04N60T IGBT 트랜지스터 LOW LOSS 듀오팩 600V 4A

Width: 4.4 mm

Height: 9.25 mm

Length: 10 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 42 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 8 A