Infineon IKW50N65ES5 IGBT 트랜지스터 Trenchstop 5 IGBT

Width: 5.31 mm

Height: 20.7 mm

Length: 15.87 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 274 W

Operating Temperature Range: - 40 C to + 175 C

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 80 A