Infineon IPAW60R600P7SXKSA1 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 9nC

Power consumption: 21W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 6A

Input Capacitance (Ciss): 363pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 600mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V