Infineon IPD020N03LF2SATMA1 MOSFETs는 저주파부터 고주파 스위칭까지 광범위한 응용 분야를 다룹니다

Fall Time: 11 ns

Rise Time: 24 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 143 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 S

Rds On - Drain-Source Resistance: 2.05 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.35 V