Infineon IPD50P03P4L11ATMA1 MOSFET

Vgs(th): 2 V

Vgs (Max): +5|-16V

Gate Charge (Qg): 55nC

Power consumption: 58W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 50A

Input Capacitance (Ciss): 3770pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 10.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet