Infineon IPD70P04P4L08ATMA1 MOSFET

Vgs(th): 2.2 V

Vgs (Max): 16V

Gate Charge (Qg): 92nC

Power consumption: 75W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 70A

Input Capacitance (Ciss): 5430pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 7.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet