Infineon IPI126N10N3 G 파워 MOSFET

Type: Power MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 35nC

Power consumption: 94W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 58A

Input Capacitance (Ciss): 2500pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 12.6mOhm

Drive Voltage (Max Rds On, Min Rds On): 6|10V