Infineon IPI200N15N3 G 파워 MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 31nC

Power consumption: 150W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 150V

Continuous drain current: 50A

Input Capacitance (Ciss): 1820pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 20mOhm

Drive Voltage (Max Rds On, Min Rds On): 8|10V

Datasheet