Infineon IPI200N25N3GAKSA1 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 86nC

Power consumption: 300W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 250V

Continuous drain current: 64A

Input Capacitance (Ciss): 7100pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 20mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V