Infineon IPI25N06S3-25 파워 MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 41nC

Power consumption: 48W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 55V

Continuous drain current: 25A

Input Capacitance (Ciss): 1862pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 25.1mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V