Infineon IPI25N06S3L-22 MOSFET

Vgs(th): 2.2 V

Vgs (Max): 16V

Gate Charge (Qg): 47nC

Power consumption: 50W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 55V

Continuous drain current: 25A

Input Capacitance (Ciss): 2260pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 21.6mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V