Infineon IPI45N06S409AKSA1 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 47nC

Power consumption: 71W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 45A

Input Capacitance (Ciss): 3785pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 9.4mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V