Infineon IPI60R520CPAKSA1 트랜스 MOSFET N-채널 600V 6.8A 3-핀(3+탭) TO-262

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 31nC

Power consumption: 66W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 6.8A

Input Capacitance (Ciss): 630pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 520mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet