Infineon IPI65R110CFDXKSA1 Power MOSFET

Type: Power MOSFET

Vgs(th): 4.5 V

Vgs (Max): 20V

Gate Charge (Qg): 118nC

Power consumption: 277.8W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 31.2A

Input Capacitance (Ciss): 3240pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 110mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V