Infineon IPP037N08N3GE8181XKSA1 MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 117nC

Power consumption: 214W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 80V

Continuous drain current: 100A

Input Capacitance (Ciss): 8110pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3.75mOhm

Drive Voltage (Max Rds On, Min Rds On): 6|10V