Infineon IRF5803D2 Trans MOSFET P-CH 40V 3.4A 8-Pin SOIC

Type: Power MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 37nC

Power consumption: 2W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 3.4A

Input Capacitance (Ciss): 1110pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 112mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet