Infineon IRF5851 트랜스 MOSFET N/P-CH 20V 2.7A/2.2A 6-핀 TSOP

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 960mW

Drain to Source voltage: 20V

Continuous drain current: 2.7A/2.2A

Current - Drain (Id) (25°C): 2.7|2.2A

Field-effect transistor type: N and P-Channel

Gate Charge - (when applying Vgs): 6nC@4.5V

Drain to Source on-state resistance: 90mOhm/135mOhm

On Voltage - (Vgs when Id is applied): 1.25V@250uA

On Resistance - (Rds when Id,Vgs is applied): 90mOhm@2.7A|4.5V

Input Capacitance - (Ciss when Vds is applied): 400pF@15V