Infineon IRF6611TRPBF Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MX T/R

Vgs(th): 2.25 V

Vgs (Max): 20V

Gate Charge (Qg): 56nC

Power consumption: 3.9|89W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 32A/150A

Input Capacitance (Ciss): 4860pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.6mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V