Infineon P3000ZL45X168HPSA1 IGBT 실리콘 모듈 PRESS PACK IGBT

Technology: Si

Mounting Style: Press Fit

Gate-Emitter Leakage Current: 350 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 2.25 V

Continuous Collector Current at 25 C: 3 kA