Infineon SMBT 3904PN H6327 BJTs - 바이폴라 트랜지스터 AF 트랜지스터

Technology: Si

Unit Weight: 8 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 250 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV