Infineon SPI15N65C3XKSA1 MOSFET

Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 63nC

Power consumption: 156W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 15A

Input Capacitance (Ciss): 1600pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 280mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V