InterFET 2N4857 JFET JFET N-채널 -40V 저소음

Technology: Si

Unit Weight: 543.605 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 100 mA

Id - Continuous Drain Current: 500 pA

Rds On - Drain-Source Resistance: 40 Ohms

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 15 V