InterFET 2N4861A JFET JFET N-채널 -30V 저소음

Technology: Si

Unit Weight: 50.585 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 80 mA

Id - Continuous Drain Current: 500 pA

Rds On - Drain-Source Resistance: 60 Ohms

Vgs - Gate-Source Breakdown Voltage: - 30 V

Vds - Drain-Source Breakdown Voltage: 15 V