InterFET 2N5116 JFET JFET P-채널 30V 저소음

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW (1/2 W)

Gate-Source Cutoff Voltage: 4 V

Drain-Source Current at Vgs=0: - 25 mA

Id - Continuous Drain Current: - 15 mA

Rds On - Drain-Source Resistance: 150 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: - 15 V