InterFET 2N6449 JFET JFET N-채널 -300V 저 Ciss

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 800 mW

Gate-Source Cutoff Voltage: - 15 V

Drain-Source Current at Vgs=0: 10 mA

Id - Continuous Drain Current: 4 nA

Forward Transconductance - Min: 0.5 mS

Vgs - Gate-Source Breakdown Voltage: - 300 V

Vds - Drain-Source Breakdown Voltage: 30 V