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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결

Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 800 mW
Gate-Source Cutoff Voltage: - 15 V
Drain-Source Current at Vgs=0: 10 mA
Id - Continuous Drain Current: 4 nA
Forward Transconductance - Min: 0.5 mS
Vgs - Gate-Source Breakdown Voltage: - 300 V
Vds - Drain-Source Breakdown Voltage: 30 V