InterFET IFN147 JFET JFET N-채널 -40V 저소음

Technology: Si

Unit Weight: 467.500 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 1.2 V

Drain-Source Current at Vgs=0: 30 mA

Id - Continuous Drain Current: 1 uA

Forward Transconductance - Min: 40 mS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 10 V