InterFET IFN5911 JFET JFET N-채널(듀얼) -25V 저 Ciss

Technology: Si

Unit Weight: 3.372 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW (1/2 W)

Gate-Source Cutoff Voltage: - 5 V

Drain-Source Current at Vgs=0: 40 mA

Id - Continuous Drain Current: 5 mA

Forward Transconductance - Min: 3000 uS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 10 V